Click on an item below for more detailed information:
THIN FILM |
TRANSENE ETCHANTS |
OPERATING RANGE |
RECOMMENDED PHOTORESISTS |
APPLICATION |
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ALUMINUM ETCHANTS TYPE A TYPE D TYPE F |
@25 °C @ 40 °C 30 Å/sec 80 Å/sec 40 Å/sec 125 Å/sec 30 Å/sec 80 Å/sec |
KLT6000 Series |
Semiconductor & Integrated Circuits GaAs & GaP Devices AlSi Materials |
|
TRANSETCH N |
120 Å/min@180 °C |
Semiconductor Devices |
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BUFFERED OXIDE ETCHANT |
Variable |
Semiconductor & Integrated Circuits |
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CHROMIUM ETCHANTS
|
@ 40 °C 40 Å/sec 32 Å/sec |
KLT6000 Series |
Thin Film Circuits |
|
Cr-SiO |
CHROMIUM ETCHANT TFE |
1000 Å/min @ 50 °C |
Thin Film Circuits |
|
COPPER ETCHANTS CE-100 CE-200 APS-100 Copper Etch 49-1 Copper Etch BTP |
1 mil/min @ 40 °C 0.5 mil/min @ 40 °C 80 Å/sec @ 40 °C 22 Å/sec @ 30 °C 150 Å/sec @ 30 °C |
KLT6000 Series |
P.C.Boards Thin Film Circuits Ni Compatability Ni Compatability |
|
GALLIUM ARSENIDE
|
100 Å/sec @ 40 °C 20 Å/sec @ 5 °C 22 Å/sec @ 25 °C Defect Delineation |
Microelectronic Circuits Semiconductor Testing |
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GALLIUM NITRIDE |
80 A/min |
LED |
||
Ga2O3 |
GALLIUM OXIDE |
10 Å/sec @ 25 °C |
Microelectronic Circuits |
|
GALLIUM PHOSPHIDE |
A Face(Ga): 115 micron/hr @ 80 °C B Face (P): 210 micron/hr @ 80 °C |
Light Emitting Diodes |
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GERMANIUM |
250 Å/sec @ 20 °C |
Semiconductor Devices |
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GOLD ETCHANTS
|
28 Å/sec @ 25 °C 30 Å/sec @ 60 °C 50 Å/sec @ 25 °C 15 Å/sec @ 25 °C 15 Å/sec @ 25 °C |
KLT6000 Series |
Thin Film Circuits GaAs compatible Ni compatible Ni compatible Ni compatible |
|
Hf, HfO |
HAFNIUM, HAFNIUM OXIDE |
45 Å/sec @ 25 °C ALD HfO 7.5 Å/sec |
Use Titanium Etch TFT |
|
In2O3 |
INDIUM OXIDE |
15 Å/sec @ 25 °C |
KLT6000 Series |
Microelectronic Circuits |
InP |
INDIUM PHOSPHIDE |
30 mins @ 25 °C |
Microelectronic Circuits |
|
IRON OXIDE MASK
|
50 Å/sec @ 25 °C 25 Å/sec @ 25 °C |
Microelectronic Circuits |
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KAPTON POLYIMIDE |
0.013 mil/min @ 40 °C 0.07 mil/min @ 60 °C |
Polyimide/Copper Clad Laminates |
||
MgO |
Magnesium Oxide Etchant MgOX12 |
40 Å/sec @ 30°C |
KLT6000 Series |
|
MOLY ETCHANT TFM |
55 Å/sec @ 30 °C 85 Å/sec @ 60 °C |
Microelectronic Circuits |
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NbN NbO |
Niobium Niobium Nitride Niobium Oxide |
50Å / sec @ 25 oC |
Microelectronics |
|
NICHROME ETCHANTS
|
50 Å/sec @ 40 °C |
KLT6000 Series |
Thin Film Circuits |
|
NICKEL ETCHANTS
|
30 Å/sec @ 25 °C 50 Å/sec @ 40 °C 3 mil/hr @ 40 °C |
KLT6000 Series |
Thin Film Circuits |
|
Nickel-Vanadium Etch |
30 Å/sec @ 20 °C |
KLT6000 Series |
Microelectronics |
|
PALLADIUM ETCHANTS
|
110 Å/sec @ 50 °C |
KLT6000 Series |
Semiconductor & Thin Film Circuits |
|
PALLADIUM ETCHANT
|
KLT6000 Series |
Electrochemical Etching |
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RUTHENIUM ETCH |
20 Å/sec @ 20 °C |
KLT6000 Series |
Microelectronics |
|
REAGENT SEMICONDUCTOR ETCHANTS (RSE) SILICON SLOW ETCH SILICON MESA ETCH PREFERENTIAL SILICON ETCHANTS
WRIGHT-JENKINS ETCHANT SIRTL ETCHANT |
Variable Variable Variable 1 mil/3 min @ 100 °C 25 m/hr @ 100 °C 1 hr @ 75-100 °C 5-10 min @ 118 °C Defect Characterization Defect Characterization Defect Characterization |
Semiconductor Semiconductor MEMS Semiconductors Solar Cells Semiconductor Testing Semiconductor Testing Semiconductor Testing |
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SILICON CARBIDE |
80 Å/min |
LED |
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BUFFER HF IMPROVED BD ETCHANT TIMETCH SILOX VAPOX III BUFFERED OXIDE ETCHANTS (BOE) |
800Å/min @ 25 °C Variable 90 Å/min @ 25 °C 4000 Å/min @ 22 °C 5000 Å/min Variable |
Semiconductor & Integrated Circuits PSG/BSG CVD CVD, Al Compatible Al Compatible |
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SiO |
SILICON MONOXIDE ETCH |
5000 Å/min @ 85 °C |
Semiconductor Devices |
|
TRANSETCH N |
125 Å/min @ 180 °C |
Semiconductor & Integrated Circuits |
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SILVER ETCHANT TFS |
200 Å/sec @ 25 °C |
KLT6000 Series |
Semiconductor & Thin Film Circuits |
|
Stainless Steel |
45 Å/sec @ 25 °C, AISI 316 |
KLT6000 Series |
Alloys |
|
SIE-8607 |
70 Å/sec @ 25 °C |
Capacitors Semiconductors |
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TaSi |
Tantalum Silicide Etch |
50 Å/sec @ 20 °C |
Thin Film Electronics |
|
Tin, Tin Oxide |
15 Å/sec @ 25 °C |
KLT6000 Series |
Microelectronic Circuits |
|
TITANIUM ETCHANTS
|
25 Å/sec @ 20 °C 50 Å/sec @ 30 °C 10 Å/sec @ 70 °C 50 Å/sec @ 85 °C |
Integrated Circuits SiO2 Compatible |
||
Titanium Nitride Etch |
30 Å/sec @ 20 °C |
Microelectronics |
||
TI-TUNGSTEN ETCHANT TiW-30 |
20-30 Å/sec |
KLT6000 Series |
Thin Film Circuits |
|
TUNGSTEN ETCH TFW |
60 Å/sec @ 30 °C |
Integrated Circuits |
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